Comparison of Low Field Electron Transport Characteristics in InP,GaP,Ga0.5In0.5P and In As0.8P0.2 by Solving Boltzmann Equation Using Iteration Model

Temperature and doping dependencies of electron mobility in InP, GaP and Ga0.52In0.48P structures have been calculated using an iterative technique. The following scattering mechanisms, i.e, impurity, polar optical phonon, acoustic phonon and piezoelectric are included in the calculation. Ionized impurity scattering has been treated beyond the Born approximation using the phaseshift analysis. It is found that the electron mobility decreases monotonically as the temperature increases from 100K to 500K for each material which is depended to their band structures characteristics. The low temperature value of electron mobility increases significantly with increasing doping concentration. The iterative results are in fair agreement with other recent calculations obtained using the relaxationtime approximation and experimental methods.